Reliable thin film resistors for integrated circuit applications

Electrical resistors – With base extending along resistance element – Resistance element and/or terminals printed or marked on base

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338195, 338309, 338314, H01C 1012

Patent

active

053231384

ABSTRACT:
A thin film resistor with an insulating layer disposed between a substrate material and a resistor material is disclosed. Also, disclosed is a technique for fabricating this thin film resistor. In accordance with the preferred embodiment, the thin film resistor employs an insulating layer of silicon nitride with a thickness of 2000 .ANG.. The insulating layer prevents the resistor layer from diffusing into the substrate material which, in turn, significantly reduces variations in the resistor value during accelerated life testing. Compared to thin film resistors with a resistor layer evaporated directly upon a substrate material, reliability is increased from a few hundred hours up to thousands of hours. Also, the maximum current handling capability is increased by greater than one order of magnitude, which results in a thin film resistor which requires less surface area of a wafer.

REFERENCES:
patent: 4952904 (1990-08-01), Johnson et al.
patent: 5081439 (1992-01-01), Natzle et al.
patent: 5111179 (1992-05-01), Flassayer et al.

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