Reliable metal leads in high speed LSI semiconductors using dumm

Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame

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257670, 257671, 257767, H01L 23495

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active

057510563

ABSTRACT:
A semiconductor device having metal leads 14 with improved reliability comprising metal leads 14 on a substrate 12, a low-dielectric constant material 18 at least between the metal leads 14, and dummy leads 16 proximate the metal leads 14. Heat from the metal leads 14 is transferable to the dummy leads 16, and the dummy leads 16 are capable of dissipating the heat. The low-dielectric constant material 18 has a dielectric constant of less than 3.5. An advantage of the invention is improved reliability of metal leads for circuits using low-dielectric constant materials.

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