Semiconductor device manufacturing: process – Making passive device – Resistor
Patent
1998-01-20
2000-08-08
Hardy, David
Semiconductor device manufacturing: process
Making passive device
Resistor
438383, 438238, 438171, 438329, 438330, 257536, 257379, 257528, H01L 2120
Patent
active
061001538
ABSTRACT:
A diffusion resistor is provided that utilizes the block mask to cover only the intrinsic polysilicon gate region. The n-type source/drain doping is implanted in the contact regions, but not in the intrinsic polysilicon gate region. A N-type (or P-type) diffusion resistor in P-well (or N-well) is provided that utilizes a block mask to cover only the intrinsic polysilicon gate region. The N-type (or P-type) source/drain doping is implanted in the contact regions but not in the intrinsic polysilicon gate region. The P-well (or N-well) block mask is used to keep the P-well (or N-well) from forming under the buried resistor. This makes the parasitic capacitance of the diffusion junction very low. Also provided is a buried capacitor and method of making both a buried resistor and a buried capacitor.
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Nowak Edward J.
Tian Xiaowei
Tong Minh H.
Hardy David
International Business Machines - Corporation
Richards N. Drew
Shkurko Eugene I.
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