Coherent light generators – Particular active media – Semiconductor
Patent
1990-09-07
1993-06-01
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
H01S 319
Patent
active
052166848
ABSTRACT:
A strained quantum-well diode laser with an AlInGaAs active layer and AlGaAs cladding and/or confining layers on a GaAs substrate is provided. AlInGaAs/AlGaAs lasers can be configured in laser geometries including ridge, waveguide, buried heterostructure, oxide-defined, proton-defined, narrow-stripe, broad-stripe, coupled-stripe and linear arrays using any epitaxial growth technique. Broad-stripe devices were fabricated in graded-index separate confinement heterostructures, grown by organometallic vapor phase epitaxy on GaAs substrates, containing a single Al.sub.y In.sub.x Ga.sub.l-x-y As quantum well with x between 0.14 and 0.12 and y between 0.05 and 0.17. With increasing Al content, emission wavelengths from 890 to 785 nm were obtained. Threshold current densities, J.sub.th 's, less than 200 A cm.sup.-2 and differential quantum efficiencies in the range 71 to 88 percent were observed.
REFERENCES:
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patent: 4841531 (1989-06-01), Kondoa et al.
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Choi Hong K.
Donnelly Joseph P.
Walpole James N.
Wang Christine A.
Davie James W.
Massachusetts Institute of Technology
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