Reliable adhesion layer interface structure for polymer...

Details Reliable adhesion layer interface structure for polymer... Reliable adhesion layer interface structure for polymer...

2006-07-18

2006-07-18

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S099000, C438S240000, C438S393000

Reexamination Certificate

active

07078240

ABSTRACT:
A polymer memory device include two organic adhesion layers that facilitate an integral package comprising a lower and an upper electrode and the ferroelectric polymer memory structure. The ferroelectric polymer memory structure includes crystalline ferroelectric polymer layers such as single and co-polymer compositions. The structure includes spin-on and/or Langmuir-Blodgett deposited compositions.A memory system allows the polymer memory device to interface with various existing hosts.

REFERENCES:
patent: 5238636 (1993-08-01), Furukawa et al.
patent: 5254504 (1993-10-01), Van der Spiegel et al.
patent: 6117689 (2000-09-01), Summerfelt

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