Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Patent
1995-06-07
1996-05-21
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
257649, 257773, H01L 2358
Patent
active
055192505
ABSTRACT:
A method for manufacturing semiconductor device having metal leads 14 with improved reliability, and device for same, comprising metal leads 14 on a substrate 12, a low-dielectric constant material 18 at least between the metal leads 14, and thermoconductive insulating layer 22 deposited on the metal leads 14 and the low-dielectric constant material 18, and dummy leads 16 proximate metal leads 14. Heat from the metal leads 14 is transferable to the dummy leads 16 and thermoconductive insulating layer 22, which are both capable of dissipating the heat. A thin thermoconductive layer 24 may be deposited over the metal leads 14 prior to depositing at least the low-dielectric constant material 18 and the thermoconductive insulating layer 22. The low-dielectric constant material 18 has a dielectric constant of less than 3.5. An advantage of the invention is to improve reliability of metal leads for circuits using low-dielectric constant materials.
REFERENCES:
patent: 4987101 (1991-01-01), Kaanta et al.
patent: 5103288 (1992-04-01), Sakamoto et al.
patent: 5155576 (1992-10-01), Mizushima
patent: 5324683 (1994-06-01), Fitch et al.
Takashi Fukada and Takashi Akahori, "Preparation of SiOF Films with Low Dielectric Constant by ECR Plasma Chemical Vapor Deposition", International Conference on Solid State Devices and Materials, 1993, pp. 158-160.
P. Bruesch, F. Stucki, Th. Baumann, P. Kluge-Weiss, B. Bruhl, L. Niemeyer R. Strumpler, B. Ziegler, M. Mielke, "Electrical and Infrared Dielectrical Properties of Silica Aerogels and of Silica-Aerogel-Based Composites", Appl. Phys. A 57, 1993, pp. 329-337.
Shinichi Ito and Yoshio Homma, "application of Surface Reformed Thick Spin-on Glass to MOS Device Planarization", Electrochem. Soc., vol. 137, No. 4, Apr. 1990, pp. 1213-1218.
"Chronological Scientific Tables" Ed. Tokyo Astronomical Observatory, Published by Maruzen, Tokyo (1986).
K. E. Goodson, M. I. Flik, L. T. Su, and Dimitri A. Antoniadis, Fellow, IEEE, "Annealint-Temperature Dependence of the Thermal Conductivity of LPCVD Silicon-Dioxide Layers", IEEE Device Letters, vol. 14, No. 10, Oct., 1993, pp. 490-492.
E. U. Condon, Ph.D., "Heat and Thermodynamics", Handbook of Physics, Second Edition.
Katsuyuki Musaka, Shinsuke Mizuno, Kiyoaki Hara, "Single Step Gap Filling Technology For Subhalf Micron Metal Spacings on Plasma Enhanced TEOS/O.sub.2 Chemical Vapor Deposition System", Applied Materials Japan Inc. Technology Center, pp. 510-512.
Takashi USAMI, Kimiaki Shimokawa and Masaki Yoshimauru, "Low Dielectric Constant Interlayer using Fluoride Doped Silicon Oxide", 1993 International Conference on Solid State Devices and materials, Makuhari, pp. 161-163.
Stanley Wolf, Ph.D. "Silicon Processing for the VLSI Era", Process Integration, vol. 2, pp. 194-200.
Houston Kay L.
Kesterson James C.
Prenty Mark V.
Stoltz Richard A.
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