Release strategies for making transferable semiconductor...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S455000, C438S761000, C257SE21214

Reexamination Certificate

active

07932123

ABSTRACT:
Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

REFERENCES:
patent: 4663828 (1987-05-01), Hanak
patent: 4761335 (1988-08-01), Aurichio et al.
patent: 4784720 (1988-11-01), Douglas
patent: 4855017 (1989-08-01), Douglas
patent: 5434751 (1995-07-01), Cole, Jr. et al.
patent: 5501893 (1996-03-01), Laermer et al.
patent: 6057212 (2000-05-01), Chan et al.
patent: 6277712 (2001-08-01), Kang et al.
patent: 6316283 (2001-11-01), Saurer
patent: 6661037 (2003-12-01), Pan et al.
patent: 6784450 (2004-08-01), Pan et al.
patent: 6900094 (2005-05-01), Hammond et al.
patent: 6917061 (2005-07-01), Pan et al.
patent: 7033961 (2006-04-01), Smart et al.
patent: 7169546 (2007-01-01), Suzuki et al.
patent: 7186624 (2007-03-01), Welser et al.
patent: 7195733 (2007-03-01), Rogers et al.
patent: 7255919 (2007-08-01), Sakata et al.
patent: 7425523 (2008-09-01), Ikemizu et al.
patent: 7521292 (2009-04-01), Rogers et al.
patent: 7557367 (2009-07-01), Rogers et al.
patent: 7622367 (2009-11-01), Nuzzo et al.
patent: 7700402 (2010-04-01), Wild et al.
patent: 7704684 (2010-04-01), Rogers et al.
patent: 7705280 (2010-04-01), Nuzzo et al.
patent: 7799699 (2010-09-01), Nuzzo et al.
patent: 2003/0087476 (2003-05-01), Oohata et al.
patent: 2004/0252559 (2004-12-01), Gupta
patent: 2005/0082526 (2005-04-01), Bedell et al.
patent: 2005/0233546 (2005-10-01), Oohata et al.
patent: 2005/0238967 (2005-10-01), Rogers et al.
patent: 2006/0038182 (2006-02-01), Rogers et al.
patent: 2006/0049485 (2006-03-01), Pan et al.
patent: 2006/0085976 (2006-04-01), Eldridge et al.
patent: 2006/0286488 (2006-12-01), Rogers et al.
patent: 2006/0286785 (2006-12-01), Rogers et al.
patent: 2007/0032089 (2007-02-01), Nuzzo et al.
patent: 2008/0055581 (2008-03-01), Rogers et al.
patent: 2008/0108171 (2008-05-01), Rogers et al.
patent: 2008/0157235 (2008-07-01), Rogers et al.
patent: 2008/0212102 (2008-09-01), Nuzzo et al.
patent: 2009/0199960 (2009-08-01), Nuzzo et al.
patent: 2009/0289246 (2009-11-01), Schneider et al.
patent: 2009/0294803 (2009-12-01), Nuzzo et al.
patent: 2010/0002402 (2010-01-01), Rogers et al.
patent: 2010/0052112 (2010-03-01), Rogers et al.
patent: 2010/0059863 (2010-03-01), Rogers et al.
patent: 2010/0072577 (2010-03-01), Nuzzo et al.
patent: 4241045 (1994-05-01), None
patent: 200710562 (2007-03-01), None
patent: 200838553 (2007-10-01), None
patent: WO 02/092778 (2002-11-01), None
patent: WO 2005/054119 (2005-06-01), None
patent: WO 2005/091370 (2005-09-01), None
patent: WO 2005/104756 (2005-11-01), None
patent: WO 2005/122285 (2005-12-01), None
patent: WO 2006/130721 (2006-12-01), None
patent: WO 2007/126412 (2007-11-01), None
patent: WO 2008/030666 (2008-03-01), None
patent: WO 2008/030960 (2008-03-01), None
patent: WO 2008/036837 (2008-03-01), None
patent: WO 2008/055054 (2008-05-01), None
patent: WO 2008/143635 (2008-11-01), None
patent: WO 2008/143635 (2008-12-01), None
patent: WO 2009/011709 (2009-01-01), None
patent: WO 2009/111641 (2009-09-01), None
patent: WO 2010/005707 (2010-01-01), None
patent: WO 2010/036807 (2010-04-01), None
Ahn et al. (Jun. 2006) “High-Speed Mechanically Flexible Single-Crystal Silicon Thin-Film Transistors on Plastic Substrates,”IEEE Electron Dev. Lett.27(6):460-462.
Bao et al. (1999) “Printable Organic and Polymeric Semiconducting Materials and Devices,”J. Mater. Chem.9:1895-1904.
Blanchet et al. (2003) “Printing Techniques for Plastic Electronics,”J. Imag. Sci. Tech.47(4):296-303.
Blanchet et al. (2003) “Large Area, High Resolution, Dry Printing of Conducting Polymers for Organic Electronics,”Appl. Phys. Lett.82:463-465.
Cao et al. (2006) “Highly Bendable, Transparent Thin-Film Transistors That Use Carbon-Nanotube-Based Conductors and Semiconductors with Elastomeric Dielectrics,”Adv. Mater.18(3):304-309.
Choi et al. (2007) “Biaxially Stretchable ‘Wavy’ Silicon Nanomembranes,”Nano Lett.7(6):1655-1663.
Hsia et al. (2005) “Collapse of Stamps for Soft Lithography Due to Interfacial Adhesion,”Appl. Phys. Lett.86:154106.
Hsu et al. (2003) “Nature of Electrical Contacts in a Metal-Molecule-Semiconductor System,”J. Vac. Sci. Technol. B21(4):1928-1935.
Huang et al. (2005) “Stamp Collapse in Soft Lithography,”Langmuir21:8058-8068.
Hur et al. (Jun. 13, 2005) “Extreme Bendability of Single Walled Carbon Nanotube Networks Transferred From High-Temperature Growth Substrates to Plastic and Their Use in Thin-Film Transistors,”Appl. Phys. Lett.243502.
Hur et al. (2005) “Organic Nanodelectrics for Low Voltage Carbon Nanotube Thin Film Transistors and Complementary Logc Gates,”J. Am. Chem. Soc.127:13808-13809.
Hur et al. (Dec. 2004) “Nanotransfer Printing by Use of Noncovalent Surface Forces: Applications to Thin-Film Transistors that Use Single-Walled Carbon Nanotube Networks and Semiconducting Polymers,”Appl. Phys. Lett.85(23):5730-.
Jeon et al. (Aug. 4, 2004) “Three Dimensional Nanofabrication with Rubber Stamps and Conformable Photomasks,”Adv. Mater.16(15):1369-1375.
Jeon et al. (2004) “Fabricating Complex Three-Dimensional Nanostructures with High Resolution Conformable Phase Masks,”Proc. Natl. Acad. Sci.USA 101:12428-12433.
Kang et al. (2007) “High-Performance Electronics Using Dense, Perfectly Aligned Arrays of Single-Walled Carbon Nanotubes,”Nat. Nanotechnol.2:230-236.
Khang et al. (2006) “A Stretchable Form of Single-Crystal Silicon for High-Performance Electronics on Rubber Substraights,”Science311:208-212.
Ko et al. (2006) “Bulk Quantities of Single-Crystal Silicon Micro-/Nanoribbons Generated from Bulk Wafers,”Nano Lett.6(10):2318-2324.
Kocabas et al. (2006) “Spatially Selective Guided Growth of High-Coverage Arrays and Random Networks of Single-Walled Carbon Nanotubes and Their Integration into Electronic Devices,”J. Am. Chem. Soc.128:4540-4541.
Kocabas et al. (2005) “Guided Growth of Large-Scale, Horizontally Aligned Arrays of Single-Walled Carbon Nanotubes and Their Use in Thin-Film Transistors,”Small1(11):1110-1116.
Lee et al. (2004)“Organic Light-Emitting Diodes Formed by Soft Contact Lamination,”Proc. Natl. Acad. Sci.USA 101(2):429-433.
Lee et al. (2005) “Large-Area, Selective Transfer of Microstructured Silicon (μs-Si): A Printing-Based Approach to High-Performance Thin0Film Transistors Supported on Flexible Substraights,”Adv. Mater.17:2332-2336.
Lee et al. (2005) “A Printable Form of Single-Crystalline Gallium Nitride for Flexible Optoelectronic Systems,”Small1:1164-1168.
Loo et al. (2002) “Interfacial Chemistries for Nanoscale Transfer Printing,”J. Am. Chem. Soc.124:7654-7655.
Loo et al. (2003) “Electrical Contacts to Molecular Layers by Nanotransfer Printing,”Nano Lett.3(7):913-917.
Loo et al. (2002) “High-Resolution Transfer Printing on GaAs Surfaces Using Alkane Dithiol Monolayers,”J. Vac. Sci. Technol. B20(6):2853-2856.
Loo et al. (2002) “Soft, Conformable Electrical Contacts for Organic Semiconductors: High-Resolution Plastic Circuits by Lamination,”Proc. Natl. Acad. Sci.USA 99(16):10252-10256.
Loo et al. (2002) “Additive, Nanoscale Patterning of Metal Films with a Stamp and a Surface Chemistry Mediated Transfer Process: Applications in Plastic Electronics,”Appl. Physics Lett.81:562-564.
Mack et al. (2006

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Release strategies for making transferable semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Release strategies for making transferable semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Release strategies for making transferable semiconductor... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2687056

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.