Relaxed channel high electron mobility transistor

Details Relaxed channel high electron mobility transistor Relaxed channel high electron mobility transistor

1995-10-26

1997-09-16

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257194, 257201, 257615, 438168, 438172, H01L 310328

Patent

active

056683871

ABSTRACT:
A pseudomorphic HEMT having a partially relaxed InGaAs channel layer. In order to increase device performance and lower the electron transport energy levels within the potential well defined by the conduction band of the channel layer, the channel layer thickness is increased beyond a critical thickness that defines where a strained InGaAs channel becomes relaxed and forms crystal lattice dislocations. The channel layer is partially relaxed in that the channel layer thickness exceeds the critical thickness, but the thickness of the channel layer is limited so that dislocations only form in a single direction.

REFERENCES:
patent: 5038187 (1991-08-01), Zhou
patent: 5060030 (1991-10-01), Hoke
patent: 5091759 (1992-02-01), Shih et al.
patent: 5140386 (1992-08-01), Huang et al.
patent: 5262660 (1993-11-01), Streit et al.
patent: 5285087 (1994-02-01), Narita et al.
patent: 5367182 (1994-11-01), Matsugatani et al.
patent: 5373168 (1994-12-01), Ando et al.
patent: 5393990 (1995-02-01), Kohn
patent: 5406099 (1995-04-01), Hiramatsu
patent: 5420442 (1995-05-01), Hasenberg et al.
Streit, Dwight C., "GaAs and InP selective molecular-beam epitaxy," J. Vac. Sci. Technol., B 13(2) Mar. 1995.

Affiliated with

Also associated with

Rating

Relaxed channel high electron mobility transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Relaxed channel high electron mobility transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Relaxed channel high electron mobility transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-220508