Reinforced bond pad for a semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead

Reexamination Certificate

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Details

C257S758000, C257S781000, C257S784000

Reexamination Certificate

active

07115985

ABSTRACT:
Disclosed herein are novel support structures for pad reinforcement in conjunction with new bond pad designs for semiconductor devices. The new bond pad designs avoid the problems associated with probe testing by providing a probe region that is separate from a wire bond region. Separating the probe region212from the wire bond region210and forming the bond pad211over active circuitry has several advantages. By separating the probe region212from the wire bond region210, the wire bond region210is not damaged by probe testing, allowing for more reliable wire bonds. Also, forming the bond pad211over active circuitry, including metal interconnect layers, allows the integrated circuit to be smaller.

REFERENCES:
patent: 6844631 (2005-01-01), Yong et al.
patent: 2004/0130029 (2004-07-01), Raaijmakers et al.
patent: 2005/0145959 (2005-07-01), Forbes et al.

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