Regulatable field emitter device and method of production thereo

Electric lamp and discharge devices – Liquid electrode discharge devices – Plural anodes with anode arc shield

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313306, 313307, 313308, 313309, 3151691, 257 22, H01J 3726, H01J 102, H01J 2952

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053592565

ABSTRACT:
A non-power generating current limiting device such as a field effect transistor is provided to output a regulated current in dependence upon a control voltage. An electron field emitter is connected to a drain or output of the non-power generating current limiting device to receive the regulated current. A tip of the electron field emitter emits electrons towards a collector anode. An extractor gate can be provided between the electron field emitter and the collector anode to control the rate of electron emission from the electron field emitter. Because the non-power generating current limiting device regulates the current to the electron field emitter, a maximum current output of the electron field emitter is limited to the regulated current from the voltage controlled current source. The electron field emitter is thus protected from destruction due to excess current. The non-power generating current limiting device can also be used to modulate electron emission from the field emitter.

REFERENCES:
patent: 3665241 (1972-05-01), Spindt et al.
patent: 4307507 (1981-12-01), Gray et al.
patent: 4513308 (1985-04-01), Greene et al.
patent: 4578614 (1986-03-01), Gray et al.
patent: 4728851 (1988-03-01), Lambe
patent: 4901028 (1990-02-01), Gray et al.
patent: 4904895 (1990-02-01), Tsukamoto et al.
patent: 4940916 (1990-04-01), Borel et al.
patent: 4956574 (1990-09-01), Kane
patent: 5075595 (1991-12-01), Kane
patent: 5103145 (1992-04-01), Doran
patent: 5191217 (1993-03-01), Kane et al.
Field Effect Controlled Vacuum Field--Emission Cathods A. Ting, et al, Teical Digest of 1VMC91, 1991.
A Vacuum Field Effect Transistor Using Silicon Field Emitter Arrays, H. F. Gray, G. J. Campisi, R. F. Greene, IEDM Technical Digest, Dec. 7-10, 1986, pp. 776-779.
Fabrication of Silicon Point, Wedge, and Trench FEAs, G. W. Jones, C. T. Sune, Tech. Digest of IVMC 91, Aug. 22-24, 1991, pp. 34-35.
Field-Effect Controlled Vacuum Field-Emission Cathodes, A. Ting, C. M. Tang, T. Swden, D. McCarthy and M. Peckerar, Technical Digest of IVMC 91, Aug. 22-24, 1991, pp. 200-201.
High Current Density Silicon FEAs, H. F. Gray, J. L. Shaw, G. W. Jones, C. R. Sune, Tech. Digest of IVMC 91, Aug. 22-24, 1991, pp. 30-31.
Film Edge Emitters: The Basis for a New Vacuum Transistor, H. F. Gray, J. L. Shaw, A. I. Akinwande, P. Bauhahn, IEDM 91-201, 1991, pp. 201.varies.204.
Point and Wedge Tungsten-on-Silicon Field Emitter Arrays, H. F. Gray, J. L. Shaw, IEDM, Dec. 9, 1991.

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