Regrowing selectively formed ion amorphosized regions by thermal

Details Regrowing selectively formed ion amorphosized regions by thermal Regrowing selectively formed ion amorphosized regions by thermal

1981-05-14

1983-05-31

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 148175, 148187, 357 2, 357 59, 357 91, H07L 21263, H07L 21225

Patent

active

043859372

ABSTRACT:
Processes for forming a wafer having SOS structure are provided. A single crystal silicon layer is formed on a principal plane of a sapphire substrate. An amorphous portion is formed in a silicon layer leaving its surface portion of predetermined depth as it is and by injecting Si.sup.+ into the single crystal silicon layer. This amorphous portion reaches the interface of sapphire substrate. A wafer thus formed is placed on a cooling table in a furnace. The substrate is fixedly bonded onto the cooling table with indium and cooled to a predetermined temperature. A temperature higher than that applied to the sapphire substrate is applied to the silicon layer including the amorphous portion using a heater arranged in the furnace and N.sub.2 gas flowing into the furnace. The SOS wafer is then returned to room temperature.

REFERENCES:
patent: 4177084 (1979-12-01), Lau et al.
patent: 4261762 (1981-04-01), King
patent: 4309225 (1982-01-01), Fan et al.
Fang et al., IBM-TDB, 22, (1979), 1236.
Csepregi et al., J. Appl. Phys. 49, (1978), 3906.
Fang et al., IBM-TDB, 23, (Jun. 1980), 362.
"Laser Annealing of Silicon on Saphire" by M. E. Roulet et al., Journal of Applied Physics, vol. 50, #8, Aug. 1979, pp. 536-538.
Dynamics of Nd:YAG Laser Annealing of Silicon on Saphire by W. Luthy et al., Applied Physics Letters, vol. 35, #11, Dec. 1, 1979, pp. 873-875.

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