Registration of patterns formed of multiple fields

Boots – shoes – and leggings

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

2504911, 2504922, 436518, 364491, 364489, G06F 1500, G01J 100, A61N 500

Patent

active

053011244

ABSTRACT:
A pattern is aligned and exposed with a lithography system so that chips larger than the deflection field can be formed by exposing M.times.N fields in a mosaic pattern. The method corrects the deflection field to compensate for the orientation of a previous pattern on a substrate and compensates for errors due to height caused by the beam landing non perpendicular to the target. Two basic procedures disclosed are called "3-mark" which are only applicable to 2.times.2 arrays of fields, and "M.times.N" which covers the general situation, but with slightly less accuracy.

REFERENCES:
patent: 3900736 (1975-08-01), Michail et al.
patent: 4322626 (1982-03-01), Kawashima
patent: 4334156 (1982-06-01), Bohlen et al.
patent: 4390788 (1928-06-01), Hayashi et al.
patent: 4413186 (1983-11-01), Uema
patent: 4430571 (1984-02-01), Smith et al.
patent: 4467211 (1984-08-01), Smith et al.
patent: 4468565 (1984-08-01), Blair et al.
patent: 4472824 (1984-09-01), Buckley
patent: 4489241 (1984-12-01), Matsuda et al.
patent: 4500790 (1985-02-01), Bretscher et al.
patent: 4538069 (1985-08-01), Shambroom et al.
patent: 4728799 (1988-03-01), Gordon et al.
patent: 4789945 (1988-12-01), Niijima
patent: 4812661 (1989-03-01), Owen
patent: 4818885 (1989-04-01), Davis et al.
patent: 4945246 (1990-07-01), Davis et al.
patent: 5043586 (1991-08-01), Giuffre et al.
patent: 5140366 (1992-08-01), Shiozawa et al.
patent: 5143854 (1992-09-01), Pirrung et al.
patent: 5169488 (1992-12-01), Giuffre et al.
D. E. Davis, Stiching Technique for Electron-Beam Lithography System, IBM Technical Disclosure Bulletin, vol. 21, No. 5, Oct. 1978.
D. E. Davis, Field stitching Method, IBM Technical Disclosure Bulletin, vol. 22, No. 1, Jun. 1979.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Registration of patterns formed of multiple fields does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Registration of patterns formed of multiple fields, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Registration of patterns formed of multiple fields will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-516994

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.