Registration accuracy measurement mark, method of repairing defe

Details Registration accuracy measurement mark, method of repairing defe Registration accuracy measurement mark, method of repairing defe

1999-01-15

2000-05-30

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

G03F 900

Patent

active

060689528

ABSTRACT:
The present invention includes a first semiconductor element forming member formed in a first layer, a first measurement mark formed by the same manufacturing step as the first semiconductor element forming member, a second semiconductor element forming member formed in a second layer above the first layer, and a second measurement mark formed in the same manufacturing step as the second semiconductor element forming member for measuring registration accuracy between the first and second semiconductor element forming members. The first measurement mark has a pattern which receives same influence of aberration as the first semiconductor element forming member when irradiated with light, and the second measurement mark has a pattern which receives same influence of aberration as the second semiconductor element forming member when irradiated with light. Thus, a registration accuracy measurement mark taking into consideration the influence of aberration can be provided.

REFERENCES:
patent: 4655598 (1987-04-01), Murakami et al.
patent: 5250983 (1993-10-01), Yamamura
patent: 5308682 (1994-05-01), Morikawa
patent: 5457334 (1995-10-01), Nishimoto
patent: 5487963 (1996-01-01), Sugawara
patent: 5614767 (1997-03-01), Ohara
patent: 5646452 (1997-07-01), Narimatsu
patent: 5888674 (1999-03-01), Yang et al.

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