Registration accuracy measurement mark

Details Registration accuracy measurement mark Registration accuracy measurement mark

1996-06-27

1999-04-06

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Alignment marks

428195, 428209, H01L 23544

Patent

active

058922911

ABSTRACT:
The present invention includes a first semiconductor element forming member formed in a first layer, a first measurement mark formed by the same manufacturing step as the first semiconductor element forming member, a second semiconductor element forming member formed in a second layer above the first layer, and a second measurement mark formed in the same manufacturing step as the second semiconductor element forming member for measuring registration accuracy between the first and second semiconductor element forming members. The first measurement mark has a pattern which receives same influence of aberration as the first semiconductor element forming member when irradiated with light, and the second measurement mark has a pattern which receives same influence of aberration as the second semiconductor element forming member when irradiated with light. Thus, a registration accuracy measurement mark taking into consideration the influence of aberration can be provided.

REFERENCES:
patent: 4655598 (1987-04-01), Murakami et al.
patent: 5308682 (1994-05-01), Morikawa
patent: 5457334 (1995-10-01), Nishimoto
patent: 5614767 (1997-03-01), Ohara
patent: 5646452 (1997-07-01), Narimatsu

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