Regionally thinned microstructures for microbolometers

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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C438S720000, C250S338200

Reexamination Certificate

active

11544591

ABSTRACT:
Microbolometers with regionally thinned microbridges are produced by depositing a thin film (0.6 μm) of silicon nitride on a silicon substrate, forming microbridges on the substrate, etching the thin film to define windows in a pixel area, thinning the windows, releasing the silicon nitride, depositing a conductive YBaCuO film on the bridges, depositing a conductive film (Au) on the YBaCuO film, and removing selected areas of the YBaCuO and conductive films.

REFERENCES:
patent: 5288649 (1994-02-01), Keenan
patent: 6198098 (2001-03-01), Laou
patent: 6307194 (2001-10-01), Fitzgibbons et al.
patent: 6388255 (2002-05-01), Di Maio et al.
patent: 2003/0062480 (2003-04-01), Kanzaki
patent: 2003/0141453 (2003-07-01), Reed et al.
patent: 2004/0173751 (2004-09-01), Komobuchi et al.

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