Regenerative MOS transistor charge detectors for charge coupled

Electrical transmission or interconnection systems – Personnel safety or limit control features – Interlock

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Details

307221D, 307243, 307279, 307DIG3, H03K 518, H03K 520, H03K 3286, H03K 3353

Patent

active

040258017

ABSTRACT:
The disclosure relates to improved detectors for use in digital charge coupled device (CCD) applications as, for example, in a multiplexing system, for recreating full logic voltage levels by detecting extremely small amounts of charge available in CCD bits. This is accomplished by means of a flip-flop circuit wherein opposite nodes of the flip-flop are precharged to a predetermined intermediate level between a logical 0 and a logical 1, one of the nodes being a reference node and the other node being coupled to a CCD storage device. During sampling of the bits being read out from the CCD storage device, the detecting node of the flip-flop will have its voltage altered, either upwardly or downwardly, from the charge on the CCD being read out. This will cause an imbalance in the flip-flop and cause the flip-flop to conduct on only one side thereof, this being determined by the charge detected. In this way, a very low level signal can be detected and amplified to a full logic voltage level for readout.

REFERENCES:
patent: 3678473 (1972-07-01), Wahlstrom
patent: 3750155 (1973-07-01), Oman
patent: 3758794 (1973-09-01), Kosonocky
patent: 3774176 (1973-11-01), Stein et al.
patent: 3838295 (1974-09-01), Lindell
patent: 3891977 (1975-06-01), Amelio et al.
patent: 3892984 (1975-07-01), Stein
patent: 3955101 (1976-05-01), Amelio et al.

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