Regeneration process of etching solution, etching process,...

Details Regeneration process of etching solution, etching process,... Regeneration process of etching solution, etching process,...

2007-07-03

2007-07-03

Ahmed, Shamim (Department: 1765)

Etching a substrate: processes

Nongaseous phase etching of substrate

Recycling, regenerating, or rejunevating etchant

C216S083000, C216S096000, C216S099000, C438S745000, C438S757000

Reexamination Certificate

active

10661662

ABSTRACT:
A regeneration process is disclosed for an etching solution composed of a phosphoric acid solution and used in etching silicon nitride films in an etch bath. As a result of the etching, the etching solution contains a silicon compound. According to the regeneration process, the etching solution with a silicon compound contained therein is taken out of the etch bath. Water is then added to the taken-out etching solution to lower a concentration of phosphoric acid in the etching solution to 80 to 50 wt. %. By the lowing of the concentration of phosphoric acid, the silicon compound is caused to precipitate. The thus-precipitated silicon compound is removed from the etching solution. An etching process making use of the regeneration process and an etching system suitable for use in practicing the regeneration process and etching process are also disclosed.

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