Regeneration of alignment marks after shallow trench isolation w

Details Regeneration of alignment marks after shallow trench isolation w Regeneration of alignment marks after shallow trench isolation w

1998-08-17

2000-03-14

Utech, Benjamin L.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having substrate registration feature

438692, 438697, 438700, H01L 2176

Patent

active

060372362

ABSTRACT:
A method of preserving alignment marks in integrated circuit substrates using shallow trench isolation after planarization using chemical mechanical polishing. A layer of silicon nitride is formed on the substrate and openings defining alignment trenches and isolation trenches are etched in the silicon nitride layer. Alignment trenches are formed in auxiliary alignment regions of the substrate and isolation trenches are formed in the active region of the substrate during the same process step using the openings in the silicon nitride layer as a mask. A layer of dielectric is then deposited on the substrate filling the alignment trenches. The dielectric is then etched back and the substrate is planarized. That part of the silicon nitride layer in the auxiliary region of the substrate is then etched away leaving dielectric in the alignment trenches extending a step height above the substrate surface. The dielectric in the alignment trenches form auxiliary alignment marks which will be preserved during subsequent processing steps.

REFERENCES:
patent: 5229316 (1993-07-01), Lee et al.
patent: 5310691 (1994-05-01), Suda
patent: 5401691 (1995-03-01), Caldwell
patent: 5783490 (1998-07-01), Tseng
patent: 5786260 (1998-07-01), Jang et al.
patent: 5897371 (1999-04-01), Yeh et al.
patent: 5950093 (1999-09-01), Wei
patent: 5963816 (1999-10-01), Wang et al.

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