Static information storage and retrieval – Addressing
Reexamination Certificate
2005-01-04
2005-01-04
Nguyen, Van Thu (Department: 2824)
Static information storage and retrieval
Addressing
C365S230040, C365S230080
Reexamination Certificate
active
06839300
ABSTRACT:
A dual mode, full density/half density SDRAM includes a refresh controller specifically adapted to refresh memory cells of the SDRAM in the half density mode at a rate that is significantly slower than the rate at which the memory cells are refreshed in the full density mode. In the full density mode, the refresh controller increments a counter at a rate that is half the rate the counter is incremented in the full density mode. A refresh trigger pulse, which initiates the refresh of the memory cells, is generated when the counter has incremented to one of a first counter stage in the full density mode and a counter stage two stages beyond the first counter stage in the half density mode. Circuitry is also provided for ignoring some auto-refresh commands applied to the SDRAM in the half density mode so that the memory cells are also refreshed less frequently in the auto-refresh mode. The SDRAM also includes circuitry for remapping one of the row address bits for use as a column address bit in the half density mode so that the SDRAM can interface with system adapted for conventional dual mode SDRAMs.
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Stallings, William, “Computer Organization&Architecture: Designing for Performance,” pp. 103-116.
Cowles Timoty B.
Mullarkey Patrick J.
Shore Michael A.
Dorsey & Whitney LLP
Nguyen Van Thu
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