Refractory passivated ion-implanted GaAs ohmic contacts

Details Refractory passivated ion-implanted GaAs ohmic contacts Refractory passivated ion-implanted GaAs ohmic contacts

1980-12-10

1982-05-18

Roy, Upendra

Metal treatment

Compositions

Heat treating

148187, 357 61, 357 67, 357 91, H01L 754, H01L 736, H01L 2348

Patent

active

043303439

ABSTRACT:
A method of attaining n.sup.+ regions with fine planar geometry in the soe and drain of GaAs devices utilizing ion implantation which improves ohmic contact with a refractory film. A layer of TiW refractory film is deposited on GaAs. .sup.29 Si ions are implanted in the GaAs through the refractory film so that the peak concentration is no more than approximately 100A below the TiW-GaAs interface. The entire structure is then annealed. A gold overlay is then deposited on the TiW layer to which electrical contacts may be attached and by which the contact resistivity is measured. Typical specific contact resistivity values are in the low 10.sup.-6 ohm/cm.sup.2 range.

REFERENCES:
patent: 3909307 (1975-08-01), Stein
patent: 3943556 (1976-03-01), Wilson
patent: 3987480 (1976-10-01), Diguet et al.
patent: 4141022 (1979-02-01), Siggs et al.
patent: 4298403 (1981-11-01), Davey et al.
Favennec et al., Solid St. Electronics, 21, (1978), 705.
Ho et al., IBM-TDB, 21, (1978), 1952.
Jaros et al., Solid St. Electronics, 18, (1975), 1029.
Kung et al., Electronics Letters, 13, (Mar. 1977), 187.

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