Refractory metal silicide sputtering target

Details Refractory metal silicide sputtering target Refractory metal silicide sputtering target

1985-04-15

1987-05-05

Terapane, John F.

Powder metallurgy processes

Powder metallurgy processes with heating or sintering

Metal and nonmetal in final product

419 31, 419 33, 419 48, 419 60, 75230, B22F 102, C22C 2918, C22C 3200

Patent

active

046631208

ABSTRACT:
A refractory metal silicide sputtering target is made by reacting refractory metal and silicon to about 70 to 90% completion of the reaction, comminuting the material, and then vacuum hot pressing the comminuted material to a high density compact having a theoretical density greater than about 95 percent and forming the metal silicide.

REFERENCES:
patent: 2898660 (1959-08-01), Maxwell
patent: 2921861 (1960-01-01), Wehrmann et al.
patent: 3000071 (1961-09-01), Wehrmann
patent: 4558017 (1985-12-01), Gupta et al.
patent: 4619697 (1986-10-01), Hijikata et al.

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