Refractory gate heterostructure field effect transistor

Details Refractory gate heterostructure field effect transistor Refractory gate heterostructure field effect transistor

1995-02-06

1998-04-14

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257187, 257189, 257194, 257197, 257201, H01L 310328, H01L 310336

Patent

active

057395578

ABSTRACT:
A heterostructure field effect transistor and method including at least one passivation layer (20) and at least one etch stop layer (22). Enhancement, depletion and combined devices with both enhancement mode and depletion mode devices are possible with minor process variations. Refractory gate (40) and non-gold refractory ohmic contact (52) metallization combined with other features allows non-liftoff metal patterning.

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