Refractive index changing apparatus and method

Details Refractive index changing apparatus and method Refractive index changing apparatus and method

2008-05-13

2008-05-13

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S033000, C257S024000, C257SE29071, C977S774000

Reexamination Certificate

active

07372067

ABSTRACT:
Refractive index changing apparatus includes quantum dots each having discrete energy levels including ground level and excited level, the excited level being higher than the ground level even if energy due to ambient temperature is provided on the quantum dots, barrier structure unit formed of dielectric which surrounds the quantum dots, injection unit configured to inject an electron into position of the ground level in each quantum dot via the barrier structure unit, utilizing tunneling effect, or to prevent injection of an electron into the position, injecting the electron or preventing injection of the electron controlled by changing an energy level of the injection unit, source which emits, to the quantum dots, first light beam having first energy for exciting electrons from the ground level to the excited level, and source which emits, to the quantum dots, second light beam having second energy different from the first energy.

REFERENCES:
patent: 5936258 (1999-08-01), Imamura et al.
patent: 6281519 (2001-08-01), Sugiyama et al.
patent: 2002/0117660 (2002-08-01), Kim
patent: 2006/0065902 (2006-03-01), Todori et al.
patent: 2 353 635 (2001-02-01), None
patent: 9-17966 (1997-01-01), None
patent: 2002-217488 (2002-08-01), None
patent: 2002-261318 (2002-09-01), None
Marzin et al., Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAs, Aug. 1, 1994, Phys. Rev. Lett., vol. 73, No. 5, pp. 716-719.
U.S. Appl. No. 11/335,634, filed Jan. 20, 2006, Yoshimura et al.
U.S. Appl. No. 11/441,092, filed May 26, 2006, Yoshimura et al.
R. Prasanth, et al., “All-optical switching due to state filling in quantum dots”, Applied Physics Letters, XP012061514, vol. 84, No. 20, May 17, 2004, pp. 4059-4061.
U.S. Appl. No. 11/690,989, filed Mar. 26, 2007, Todori et al.
Mark A. Greaney, et al., “Production, Spectroscopy, and Electronic Structure of Soluble Fullerence Ions”, The Journal of Physical Chemistry, vol. 95, No. 19, 1991, pp. 7142-7144.
Stanley M. Smith, et al., “Static and Dynamic Polarizabilities of Conjugated Molecules and Their Cations”, J. Phys. Chem. A, vol. 108, No. 50, 2004, pp. 11063-11072.
Junji Haruyama, “Single Electron Tunneling-Quantum Mechanics and Nanotechnologies”, Corona Publishing Co., Ltd., First Edition, 2002, 8 pages.
U.S. Appl. No. 11/229,304, filed Sep. 19, 2005, Kenji Todori et al.

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