Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2008-02-03
2010-11-16
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S103000, C257SE33037, C257SE33072
Reexamination Certificate
active
07834371
ABSTRACT:
A semiconductor light emitting device manufacture method is provided which can manufacture a semiconductor light emitting device of high quality. A first substrate of an n-type ZnO substrate is prepared. A lamination structure including an optical emission layer made of ZnO based compound semiconductor is formed on the first substrate. A p-side conductive layer is formed on the lamination structure. A first eutectic material layer made of eutectic material is formed on the p-side conductive layer. A second eutectic material layer made of eutectic material is formed on a second substrate. The first and second eutectic material layers are eutectic-bonded to couple the first and second substrates. After the first substrate is optionally thinned, an n-side electrode is formed on a partial surface of the first substrate.
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PCT/ISA/237 in PCT/JP2006/310245 and its translation of Section V.
Christen et al., “Luminescene Micro-Characterization of epitaxial ZnO and ZnO heterostructures”, http://physik.uni-halle.de/FG/seminars/ws2005/abstracts/it/i6.htm, 2 pages, printed from the Internet on Jan. 26, 2006.
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“Property of Oxides—II-VI zoku sankabutsu handoutai no kiso bussei”, Research Initiatives at Kyoto University International Innovation Center, http://www.iic.kyoto-u.ac.jp/sozo/fujita/research/zno/prop.html, 2 pages, printed from the Internet on Jan. 31, 2008. FIG. 7D of as-filed application was cited from the article.
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Horio Naochika
Kato Hiroyuki
Sano Michihiro
Chen Yoshimura LLP
Stanley Electric Co. Ltd.
Tran Minh-Loan T
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