Reflective-type mask blank for EUV lithography

Details Reflective-type mask blank for EUV lithography Reflective-type mask blank for EUV lithography

2011-06-14

2011-06-14

Rosasco, Stephen (Department: 1721)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

07960077

ABSTRACT:
A reflective mask blank for EUV lithography including a substrate having a front surface and a rear surface, a reflective layer formed over the front surface of the substrate, an absorbing layer formed over the reflective layer, and a chucking layer formed on the rear surface of the substrate and positioned to chuck the substrate to an electrostatic chuck. The substrate has a non-conducting portion which eliminates electrical conduction between the reflective layer and the chucking layer and electrical conduction between the absorbing layer and the chucking layer, and the non-conducting portion is formed by forming a portion of the substrate covered with one or more covering members and preventing formation of the reflective layer and the absorbing layer.

REFERENCES:
patent: 6098408 (2000-08-01), Levinson et al.
patent: 6749973 (2004-06-01), Shoki et al.
patent: 6806007 (2004-10-01), Abdo et al.
patent: 6984475 (2006-01-01), Levinson et al.
patent: 2002/0076625 (2002-06-01), Shoki et al.
patent: 2004/0063004 (2004-04-01), Alkemper et al.
patent: 2004/0067420 (2004-04-01), Ota
patent: 2004/0106051 (2004-06-01), Kamm
patent: 2005/0069787 (2005-03-01), Kobayashi et al.
patent: 2005/0238922 (2005-10-01), Kinoshita et al.
patent: 2006/0007433 (2006-01-01), Ikuta et al.
patent: 1 387 189 (2004-02-01), None
patent: 1 387 189 (2004-02-01), None
patent: 2000-208594 (2000-07-01), None
patent: 2002-319542 (2002-10-01), None
patent: 2005-210093 (2005-08-01), None
patent: 00/75727 (2000-12-01), None
J. Ruan, J. Hartley: “Electron beam pattern generator sensitivity to target potentials”, Proceedings of the SPIE, Conference Paper, vol. 5992, Nov. 8, 2005, pp. 1385-1395, XP002428874.
Extended European Search Report issued Dec. 29, 2010, in Patent Application No. 10014669.5.

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