Reflective-type mask

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

07960076

ABSTRACT:
A reflective-type mask having a main surface including a pattern region in the main surface, the pattern region including a multilayer reflective film which reflects the exposure light and a first absorber pattern on the multilayer reflective film, the first absorber pattern including a pattern which absorbs the exposure light and corresponds to a pattern to be formed on a wafer, a light shielding region in the main surface for preventing a region on the wafer excluding a predetermined region from being irradiated with the exposure light when the main surface is irradiated with the exposure light for transferring the first absorber pattern to the predetermined region, the light shielding region including a second absorber pattern having a lower reflectivity to the exposure light than the first absorber pattern and being provided in a position differing from a position in which the first absorber pattern is provided.

REFERENCES:
patent: 5897979 (1999-04-01), Tzu et al.
patent: 2002/0028390 (2002-03-01), Mazed
patent: 2004/0131948 (2004-07-01), Yan
patent: 2004/0188383 (2004-09-01), Lucas et al.
patent: 2006/0222961 (2006-10-01), Yan
patent: 2007/0231709 (2007-10-01), Mickan et al.
patent: 2004-266300 (2004-09-01), None
Takashi Kamo, Hajime Aoyama, Toshihiko Tanaka, Osamu Suga, Tsukasa Abe, Tadahiko Takikawa, Naoya Hayashi, Tsutomu Shoki, Youichi Usui, and Morio Hosoya,“EUVL practical mask structure with light shield area for 32nm half pitch and beyond” Proc. SPIE 7122, 712227 (2008), Online Publication Oct. 17, 2008.
Takashi Kamo, Hajime Aoyama, Toshihiko Tanaka, and Osamu Suga, “Impact of mask absorber properties on printability in EUV lithography,” Proc. SPIE 6730, 673017 (2007), Online Publication Oct. 30, 2007.
Kamo, et al., “Effects of mask absorber thickness on printability in EUV lithography with high resolution resist”, Proc. of SPIE, vol. 7028, pp. R1-R-12, (2008).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Reflective-type mask does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Reflective-type mask, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reflective-type mask will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2742878

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.