Reflective phaseshift lithography system

Details Reflective phaseshift lithography system Reflective phaseshift lithography system

1999-07-21

2000-09-19

Lee, Eddie C.

Photocopying

Projection printing and copying cameras

Illumination systems or details

355 53, 355 71, G03B 2754, G03B 2742, G03B 2772

Patent

active

06122037&

ABSTRACT:
The invention refers to a lithographic device for transferring patterns onto a wafer. The task of the invention is to create a new optical lithographic device with improved resolution and depth of sharpness which will allow semiconductor components to be produced with a higher packing density. According to the invention, an imaging device is used which includes an interferometric device with confocal beam path and a reflection phase shift mask. Based on the achievable resolution and depth of sharpness, the device is suitable for use in DUV step and scan systems for the manufacture of highly integrated semiconductor components. Electron-beam and x-ray lithography only have to be used for smaller grids.

REFERENCES:
patent: 5458999 (1995-10-01), Szabo et al.
patent: 5715084 (1998-02-01), Takahashi et al.

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