Reflective mirror for lithographic exposure and production...

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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Reexamination Certificate

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07060399

ABSTRACT:
A reflective optical mirror for semiconductor fabrication includes a capping layer above a reflective multilayer sequence. A doping is provided for the capping layer and an artificial oxide layer is grown on the capping layer with the aid of hydrogen peroxide, in particular in the presence of a catalyst. The artificially grown oxide layer is more homogeneous than a naturally grown oxide and thereby improves optical properties of the mirror during a lithographic exposure of semiconductor products.

REFERENCES:
patent: 6673524 (2004-01-01), Ghandehari et al.
patent: 2005/0048800 (2005-03-01), Wagener
patent: 1 065 532 (2001-01-01), None
Morita, M. et al.: “Native Oxide Growth on Silicon Surface in Wet Ambient”, Extended Abstract of the 22ndConference on Solid State Devices and Materials, 1990, pp. 1063-1066.
Yasaka, T. et al.: “Layer-By-Layer Oxidation of Silicon”, Materials Research Society Proc., vol. 222, 1991, pp. 225-230.
Morita, M. et al.: “Control Factor of Native Oxide Growth on Silicon Surface in Air or in Ultrapure Water”, Appl. Phys. Lett. 55 (6), American Institute of Physics, Aug. 7, 1989, pp. 562-564.

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