Reflective maskblanks

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

07348105

ABSTRACT:
A reflective mask and a reflective mask blank that can form a fine mask pattern with high accuracy in shape, achieve a sufficient contrast in a pattern inspection, and enable a pattern transfer with high accuracy. On a substrate (11), a multilayer reflective film (12) for reflecting an exposure light, a buffer layer (13), and an absorber layer for absorbing the exposure light are successively deposited in this order. This absorber layer has a layered structure composed of an uppermost layer (15) and a lower layer (14) other than it. The uppermost layer (15) exhibits a reflectance of 20% or less with respect to a light having an inspection wavelength for use in an inspection of a pattern formed in the absorber layer and further is formed of an inorganic material having a resistance against an etching condition in forming a pattern in the lower layer.

REFERENCES:
patent: 6178221 (2001-01-01), Levinson et al.
patent: 6410193 (2002-06-01), Stivers et al.
patent: 6607862 (2003-08-01), Yan et al.
patent: 6610447 (2003-08-01), Yan et al.
patent: 7118832 (2006-10-01), Yan
patent: 2002/0045108 (2002-04-01), Lee et al.
patent: 59-89422 (1984-05-01), None
patent: 2-174214 (1990-07-01), None
patent: 06-188177 (1994-07-01), None
patent: 7-333829 (1995-12-01), None
patent: 8-213303 (1996-08-01), None
patent: 2001-174976 (2001-06-01), None
patent: 2001-237174 (2001-08-01), None
patent: 2002-122981 (2002-04-01), None
patent: WO 02/41077 (2002-05-01), None
Ted Liang, et al. “Enhanced Optical Inspectability of Patterned Euvl Mask”, Intel Corporation Components Research, Proceedings of SPIE Vo. 4562 (2002), pp. 288-296.
Semiconductor Equipment and Materials International SEMI Draft Document 3414 “Specification for Absorbing Film Stacks and Multilayers On Extreme Ultraviolet Lithography Mask Blanks” Document No. 3414 dated Apr. 29, 2002.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Reflective maskblanks does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Reflective maskblanks, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reflective maskblanks will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3976278

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.