Reflective mask blank for EUV lithography and substrate with...

Details Reflective mask blank for EUV lithography and substrate with... Reflective mask blank for EUV lithography and substrate with...

2008-08-27

2010-11-16

Rosasco, Stephen (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C428S428000

Reexamination Certificate

active

07833682

ABSTRACT:
To provide an EUV mask blank of which the decrease in the reflectance during EUV exposure is suppressed, and a substrate with a functional film to be used for production of such an EUV mask blank.A substrate with a reflective layer for EUV lithography, comprising a substrate, and a reflective layer for reflecting EUV light and a protective layer for protecting the reflective layer formed in this order on the substrate, wherein the protective layer contains ruthenium (Ru) and at least one element selected from the group consisting of boron (B) and zirconium (Zr); and in the protective layer, the Ru content is from 70 at % to 95 at % and the total content of B and Zr is from 5 at % to 30 at %.

REFERENCES:
patent: 6479195 (2002-11-01), Kirchauer et al.
patent: 7172788 (2007-02-01), Yakshin et al.
patent: 2004/0196579 (2004-10-01), Shoki
patent: 2004/0224526 (2004-11-01), Shoki
patent: 2005/0026046 (2005-02-01), Yan
patent: 2007/0160874 (2007-07-01), Hayashi et al.
patent: 1 498 936 (2005-01-01), None
patent: 2002-122981 (2002-04-01), None
patent: 2005-268750 (2005-09-01), None
U.S. Appl. No. 12/483,785, filed Jun. 12, 2009, Hayashi, et al.

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