Reflective mask blank for EUV lithography and substrate with...

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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C428S430000

Reexamination Certificate

active

07736821

ABSTRACT:
To provide a substrate with a conductive film for an EUV mask blank having an increased surface hardness, and a substrate with a reflective multilayer film and an EUV mask blank using such a substrate with a conductive film.A substrate with a conductive film to be used for production of a reflective mask blank for EUV lithography, characterized in that the chief material of the conductive film is at least one member selected from the group consisting of Cr, Ti, Zr, Nb, Ni and V, and the conductive film contains B (boron) at an average concentration of from 1 to 70 at %.

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