Reflective mask blank for EUV lithography

Details Reflective mask blank for EUV lithography Reflective mask blank for EUV lithography

2010-08-12

2011-10-04

Rosasco, Stephen (Department: 1721)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

08029950

ABSTRACT:
A reflective mask blank for EUV lithography is provided which has an absorber layer wherein stress and crystal structure can be easily controlled.A reflective mask blank for EUV lithography, which comprises a substrate, and at least a reflective layer for reflecting EUV light and an absorber layer for absorbing EUV light formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta), nitrogen (N) and hydrogen (H); and in the absorber layer, the total content of Ta and N is from 50 to 99.9 at %, and the content of H is from 0.1 to 50 at %.

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