Reflection type photomask blank, reflection type photomask,...

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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C430S311000

Reexamination Certificate

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07838177

ABSTRACT:
In a reflection type photomask blank having a multilayer reflection film and a light absorption laminated layer laminated on a substrate, the light absorption laminated layer is composed by laminating a second light absorption layer having DUV light absorbing capacity and containing at least one of nitrogen and oxygen, and tantalum and silicon, on a first light absorption layer having EUV light absorbing capacity and containing tantalum and silicon.

REFERENCES:
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patent: 2004-260050 (2004-09-01), None
International Search Report of International Published Application No. PCT/JP2005/022375 (mailed Mar. 14, 2006).
International Preliminary Report on Patentability issued in International Application No. PCT/JP2005/022375, mailed on Jun. 21, 2007.
J.R. Wasson et al.: “Extreme ultraviolet mask fabrication with high inspection contrast TaSinxabsorber stack”, Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures) AIP for American Vacuum Soc, USA, vol. 21, No. 6, Dec. 10, 2003, pp. 3086-3090, XP002512519, ISSN.
Cheng H-C et al.: “Enhanced Extreme Ultraviolet Lithography Mask Inspection Contrast Using Fabry-Perot Type Antireflective Coating”, Japanese Journal of Applied Physics, Japan Society of Applied Physics, Tokyo, JP, vol. 43, No. 6B, Jun. 1, 2004, pp. 3703-3706, XP001232207, ISSN.
European Search Report issued on Feb. 18, 2009 in corresponding European Patent Application 05814171.4.
Japanese Office Action mailed May 18, 2010 and issued in corresponding Japanese Patent Application 2006-546706.

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