Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2009-11-03
2011-11-08
Nguyen, Dao H (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S081000, C257S082000, C257S099000, C257S433000, C257S435000, C257SE25020, C257SE25032, C257SE27131, C257SE31117, C257SE31119, C257SE31127, C250S221000, C250S239000, C250S552000
Reexamination Certificate
active
08053800
ABSTRACT:
A reflection-type photointerrupter of the present invention includes a substrate, a light emitting element and a light receiving element. The substrate includes a first surface, a second surface opposite the first surface, and a first and a second recesses that are open in the first surface side. The light emitting element is arranged in the first recess, while the light receiving element is arranged in the second recess. The light emitting element is capable of emitting light. The light receiving element is capable of receiving the light emitted from the light emitting element and reflected by an object to be detected.
REFERENCES:
patent: 7309855 (2007-12-01), Nagasaka et al.
patent: 7652244 (2010-01-01), Aizpuru
patent: 7842957 (2010-11-01), Goh et al.
patent: 2007-13050 (2007-01-01), None
Hamre Schumann Mueller & Larson P.C.
Nguyen Dao H
Rohm & Co., Ltd.
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