Reflection-type photoelectronic surface and photomultiplier

Details Reflection-type photoelectronic surface and photomultiplier Reflection-type photoelectronic surface and photomultiplier

1995-06-01

1996-09-17

Oberley, Alvin E.

Electric lamp and discharge devices

Photosensitive

With optical device

313373, 313375, 313377, 427 74, H01J 4016

Patent

active

055571662

ABSTRACT:
The photocathode according to this invention is characterized in that an aluminium thin film is formed on a substrate, and then an antimony thin layer is deposited directly on the aluminium thin film and is activated by an alkali metal. It is especially preferable that the antimony thin layer is deposited in a thickness of 15 .mu.g/cm.sup.2 to 45 .mu.g/cm.sup.2 and is activated by an alkali metal. Such reflection-type photocathode is applicable to photomultipliers. Among functions which are considered to be done by the Al film. which is in direct contact with the Sb layer, a first one is to prevent the alloying between the Sb layer and the substrate (e.g., Ni), and a second one is to augment a reflectance of light to be detected.

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"S-11 and S-20 Photocathode Research Activity", SPIE vol. 491 High Speed Photography (Strasbourg 1984), pp. 287-293.

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