Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2011-07-19
2011-07-19
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257SE31109
Reexamination Certificate
active
07982226
ABSTRACT:
Provided is a reflection type optical sensor device including: a semiconductor light source being formed by providing a light emitting region on a predetermined region of a substrate; and a photo-detection element being integrated on the same substrate as the substrate where the semiconductor light source is formed to surround an outer circumferential surface of the semiconductor light source, and including a light receiving region. When the light emitted from the semiconductor light source is reflected by an external object, the photo-detection element may detect the light to sense the object. Through this, it is possible to reduce cost and ensure a small size. Also, the photo-detection element is constructed to surround the outer circumferential surface of the semiconductor light source, and thus more accurately detect the light.
REFERENCES:
patent: 4605943 (1986-08-01), Nakamura et al.
patent: 5648979 (1997-07-01), Mun et al.
patent: 2005/0237524 (2005-10-01), Kamei et al.
Lee Yong-tak
Song Youngmin
Gwangju Institute of Science and Technology
Quinto Kevin
Tran Minh-Loan T
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