Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2011-08-23
2011-08-23
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C438S038000
Reexamination Certificate
active
08003987
ABSTRACT:
In order to suppress the effect due to electrons (holes) generated by incident light that cannot be prevented from entering only by means of light shielding, rather than the drain region34of a transistor, with respect to a majority carrier, a region36whose voltage is set to a value lower than the reference value of product of the voltage of a drain region and Q (unit electric charge) is provided, or a potential barrier is provided around the drain region. In such a configuration, by controlling the voltage of the periphery of the drain region34connected to a reflection electrode30to be in a floating state, photo carriers generated in the semiconductor substrate are caused to be hardly guided in the drain region34.
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Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Rao Steven H
Weiss Howard
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