Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1996-01-18
1998-04-14
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 72, 257762, 257763, 257766, 257770, H01L 29786, H01L 2943
Patent
active
057395470
ABSTRACT:
A reflection type display according to the present invention, which has a first substrate, a second substrate and a display medium interposed therebetween, includes: pixel electrodes arranged in rows and columns on the first substrate; canning lines each disposed adjacent to a respective one column of the pixel electrodes on the first substrate; a plurality of nonlinear resistance two terminal devices for electrically connecting each scanning line to the pixel electrodes of the respective one column; and signal lines disposed on the second substrate to cross the scanning lines. Each pixel electrode includes first and second metal layers and is insulated from the respective one of the scanning lines by an insulating layer. The materials of the first and second metal layers are different, and the material for the first metal layer has the reflectance higher than that of the material of the second metal layer. Each nonlinear resistance two terminal device includes a pair of electrodes and a nonlinear resistance layer provided between each pixel electrode and the insulating layer, one of the electrodes being a portion of the respective one of the scanning lines while the other is the second metal layer, the nonlinear resistance layer being in contact with the electrodes through a through hole provided in the insulating layer.
REFERENCES:
patent: 5498573 (1996-03-01), Whetten
Endoh Yoshihiro
Nomura Takao
Yamaue Satoshi
Jackson Jerome
Sharp Kabushiki Kaisha
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