Reflection technique for thermal mapping of semiconductors

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250341, 356 43, 374161, G01K 1118, G01K 1300

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048411507

ABSTRACT:
Semiconductors may be optically tested for their temperatures by illuminating them with tunable monochromatic electromagnetic radiation and observing the light reflected off of them. A transition point will occur when the wavelength of the light corresponds with the actual band gap energy of the semiconductor. At the transition point, the image of the semiconductor will appreciably darken as the light is transmitted through it, rather than being reflected off of it. The wavelength of the light at the transition point corresponds to the actual band gap energy and the actual temperature of the semiconductor.

REFERENCES:
patent: 3462224 (1969-08-01), Woods et al.
patent: 3635085 (1972-01-01), Shimotsuma et al.
patent: 3734620 (1973-05-01), Cade
patent: 4057349 (1977-11-01), Barrett
patent: 4136566 (1979-01-01), Christensen
patent: 4354105 (1982-10-01), Spirig
patent: 4355910 (1982-10-01), Quick et al.
patent: 4479848 (1984-10-01), Otsubo et al.
patent: 4671651 (1987-06-01), Toyoda et al.
Germanova et al., "An Optical Method For Measuring Temperature & Electric Field in Semiconductors", J. Phys. D: Appl. Phys., vol. 11, #17, 1978, pp. 2383-2390.

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