Reflection photolithography mask, and process for...

Details Reflection photolithography mask, and process for... Reflection photolithography mask, and process for...

2011-07-05

2011-07-05

Huff, Mark F (Department: 1721)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S296000

Reexamination Certificate

active

07972751

ABSTRACT:
The invention relates to an extreme ultraviolet photolithography mask, operating in reflection, the mask comprising a substrate, a mirror structure deposited uniformly on the substrate, and an absorbent layer which is absorbent at the operating wavelength of the mask and is deposited on top of the mirror structure and etched in a desired masking pattern. The absorbent layer contains indium among its principal constituents.

REFERENCES:
patent: 5112707 (1992-05-01), Kato et al.
patent: 2001/0001734 (2001-05-01), Ekawa et al.
patent: 2004/0115960 (2004-06-01), Drouin et al.
patent: 2004/0231971 (2004-11-01), Becker et al.
patent: 2006/0222961 (2006-10-01), Yan
patent: 2007/0077499 (2007-04-01), Ikuta et al.
patent: 61128251 (1986-06-01), None
patent: 2006190900 (2006-07-01), None
Machine Translation of JP2006190900A. Translated Jul. 26, 2010.

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