Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2006-08-15
2006-08-15
Young, Christopher G. (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
C430S030000, C382S144000
Reexamination Certificate
active
07090948
ABSTRACT:
A reflection mask, preferably, an EUV reflection mask, for imaging a pattern that has or is formed on the mask onto a semiconductor wafer with extreme ultraviolet radiation or soft X-radiation includes a substrate, a reflection layer thereon reflecting incident radiation, an absorption layer thereon absorbing incident radiation, and a hard mask thereon of a material having an etching selectivity with respect to absorbent material of the absorption layer. After exposure and development of the resist, the pattern is transferred into the hard mask in a first etching step and the resist is removed, and inspection of the pattern in the hard mask detects defects in the hard mask. Defects can be repaired by FIB. Gallium ions are implanted in the absorption layer instead of in the reflection layer, rendering a buffer layer obsolete and allowing lower aspect ratios of trenches on the finished reflection mask.
REFERENCES:
patent: 5928817 (1999-07-01), Yan et al.
patent: 5958629 (1999-09-01), Yan et al.
patent: 2001/0038953 (2001-11-01), Tsukamoto et al.
patent: 2287671 (2001-04-01), None
patent: 38 42 481 (1989-06-01), None
Liang, T. et al.: “Progress in Extreme Ultraviolet Mask Repair Using a Focused Ion Beam”, American Vacuum Society, J. Vac. Sci. Technol. B 18 (6), Nov./Dec. 2000, pp. 3216-3220.
Bollepalli, B. S. et al.: “On the Computation of Reflected Images from Extreme Ultra Violet Masks”, SPIE, vol. 3676, Mar. 1999, pp. 587-597.
Pistor, T. et al.: “Calculating Aerial Images from EUV Masks”, SPIE, vol. 3676, Mar. 1999, pp. 679-696.
CharlesGwyn, et al.: “Extreme Ultraviolet Lithography”, dated Nov. 1999, pp. 97-169.
Greenberg Laurence A.
Infineon - Technologies AG
Locher Ralph E.
Stemer Werner H.
Young Christopher G.
LandOfFree
Reflection mask and method for fabricating the reflection mask does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Reflection mask and method for fabricating the reflection mask, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reflection mask and method for fabricating the reflection mask will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3609880