Reflection element of exposure light and production method...

Optical: systems and elements – Light interference – Produced by coating or lamina

Reexamination Certificate

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C359S587000, C359S590000

Reexamination Certificate

active

10510725

ABSTRACT:
A reflector for extreme ultraviolet light, its manufacture method, a phase shift mask, an exposure apparatus and a semiconductor manufacture method, capable of making the wavelength dependency of a reflectance via a plurality of reflection surfaces be coincident with an center wavelength of exposure light and retaining a sufficient energy reaching a subject to be exposed. The reflector for exposure light to be used for exposure of a subject to be exposed in a lithography process of manufacturing a semiconductor device is configured to have a multi-layer film structure made by repetitively stacking a plurality of layers in the same order. The periodical length of the repetitive stack unit of the multi-layer film structure is set in such a manner that the center of full width at half maximum of the reflectance via a predetermined number of reflectors becomes coincident with the center wavelength of extreme ultraviolet light to be reflected (S102).

REFERENCES:
patent: 6333961 (2001-12-01), Murakami
patent: 2003/0043866 (2003-03-01), Baillargeon et al.
patent: 2005/0079333 (2005-04-01), Wheatley et al.
patent: 2005/0201442 (2005-09-01), Luo et al.
patent: 2001-27699 (2001-01-01), None
patent: 2001-237174 (2001-08-01), None
International Search Report dated Jul. 29, 2003.
Communication from European Patent Office of Application No. 03 723 149.5-1234 dated Sep. 28, 2006.

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