Reference-voltage source for replicating a terminal voltage of a

Electricity: power supply or regulation systems – Self-regulating – Using a three or more terminal semiconductive device as the...

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307305, G05F 320

Patent

active

046864520

ABSTRACT:
The circuit derives Vbep, the base-emitter voltage of a saturated PNP transistor, from the PNP portion of a four-layer (PNPN) silicon-controlled rectifier (SCR) so as to exactly match the characteristics of the PNP portion of an SCR against which the reference voltage is to be compared. The operating point of the SCR in the voltage-reference circuit is adjusted and controlled to duplicate the operating conditions in the circuit to be measured. The voltage between the end layers of the SCR includes the sum of Vbep and Vcen, the collector-emitter drop of the NPN portion of the SCR. The circuit processes this voltage to remove the Vcen term, providing an output voltage which depends upon Vbep.

REFERENCES:
patent: 4260945 (1981-04-01), Ahmed

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