Reference voltage source

Details Reference voltage source Reference voltage source

1979-12-19

1982-04-27

Beha, Jr., William H.

Electricity: power supply or regulation systems

Self-regulating

Using a three or more terminal semiconductive device as the...

307304, 323316, G05F 148

Patent

active

043273203

ABSTRACT:
A reference voltage source implemented in silicon-gate CMOS transistor technology comprises a pair of reference transistors of the same conductivity type, the gates of which are made of polycrystalline silicon and differ from each other by the type of doping. The reference voltage can be temperature-compensated by adding an auxiliary compensation voltage source or by establishing a predetermined ratio of current densities in the pair of reference transistors operating in weak inversion.

REFERENCES:
patent: RE30586 (1981-04-01), Brokaw
patent: 3975648 (1976-08-01), Tobey et al.
patent: 4041522 (1977-08-01), Oguey et al.
patent: 4068134 (1978-01-01), Tobey et al.
patent: 4096430 (1978-06-01), Waldron
patent: 4100437 (1976-07-01), Hoff
patent: 4163161 (1979-07-01), Walker
IBM Technical Disclosure Bulletin, vol. 22, No. 4, pp. 1346, 1347, Sep. 1978.

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