Reference voltage generator providing a...

Electricity: power supply or regulation systems – Self-regulating – Using a three or more terminal semiconductive device as the...

Reexamination Certificate

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Details

C323S907000, C327S513000, C327S541000

Reexamination Certificate

active

07609045

ABSTRACT:
The present invention concerns a reference voltage generator (40) that provides a reference voltage (Vref new). The voltage generator (30) is operated at a supply voltage (Vdd) being lower than the Silicon bandgap voltage. It comprises a MOSFET transistor (MN; MN3; MP4; MP7) serving as transconductor (Gptat). An input node for feeding a drain current (Iptat) into the drain of said MOSFET transistor (MN; MN3; MP4; MP7) is provided and an output node is connected to the drain and gate of said MOSFET transistor (MN; MN3; MP4; MP7). A current generator (42) allows the MOSFET transistor (MN; MN3; MP4; MP7) to be operated in a specific mode where the drain current (Iptat) has a positive temperature coefficient (αptat) and the transconductor (Gptat) has a negative temperature coefficient (αptat). The dimensions (W, L) of the MOSFET transistor are chosen such that said negative temperature coefficient (αGM) approximates said positive temperature coefficient (αptat) such that said reference voltage (Vref new), as provided at said output node, is temperature-compensated.

REFERENCES:
patent: 6160393 (2000-12-01), Ahn et al.
patent: 6437550 (2002-08-01), Andoh et al.
patent: 6466081 (2002-10-01), Eker
patent: 6566850 (2003-05-01), Heinrich
patent: 6680643 (2004-01-01), Conte et al.
patent: 6919753 (2005-07-01), Wang et al.
patent: 7205755 (2007-04-01), Ito et al.

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