Electricity: power supply or regulation systems – Self-regulating – Using a three or more terminal semiconductive device as the...
Patent
1992-02-20
1993-02-16
Stephan, Steven L.
Electricity: power supply or regulation systems
Self-regulating
Using a three or more terminal semiconductive device as the...
323315, G05F 316
Patent
active
051874296
ABSTRACT:
A reference voltage generator can provide RAMs (random access memories) with a reference voltage (generally mid-way between a supply voltage and a common potential), with improved follower characteristics. When the supply voltage and/or the load condition of the RAMs are significantly altered, the reference voltage is rapidly adjusted by dynamic switching FETs, being pulled down or up. Under balanced conditions when essentially no current flows in the switching FETs, overall power consumption is low.
REFERENCES:
patent: 4135125 (1979-01-01), Oura
patent: 4558272 (1985-12-01), Grosch
patent: 4629972 (1986-12-01), Briner et al.
patent: 4788455 (1988-11-01), Mori et al.
patent: 5008609 (1991-04-01), Fukiage
patent: 5109187 (1992-04-01), Guliani
Peter Gillingham et al., "High-Speed, High-Reliability Circuit Design for Megabit DRAM", IEEE Journal of Solid-State Circuits, vol. 26, No. 8, Aug. 1991, pp. 1171-1175.
Mowle John E.
Northern Telecom Limited
Stephan Steven L.
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