Reference voltage generator

Details Reference voltage generator Reference voltage generator

1994-05-12

1995-09-05

Pellinen, A. D.

Electricity: power supply or regulation systems

Self-regulating

Using a three or more terminal semiconductive device as the...

323313, G05F 320

Patent

active

054481597

ABSTRACT:
A current mirror is composed of N-MOS transistors N1, N2, a diode-connected P-MOS transistor P1 is connected to an output side of the current mirror, and a source of a P-MOS transistor P2 controlled according to the gate potential of the P-MOS transistor P1 is connected to a power source V.sub.CC via a polysilicon resistor R. The drain of the P-MOS transistor P2 is connected to the drain of the N-MOS transistor N2. A current-mirror-connected N-MOS transistor N3 is provided at the current mirror of the N-MOS transistors N1, N2. The output of the N-MOS transistor N3 is inputted to another current mirror composed, on the power source V.sub.CC side, of two P-MOS transistors P3, P4, a constant current is outputted from the drain of one of the two P-MOS transistors P3, P4 and received by a load circuit which is the series-parallel connection of diode-connected P-MOS transistors P5-P8, and the voltage generated at the load circuit is outputted as a reference voltage output V.sub.REF. Thereby a negative temperature dependency that the reference voltage V.sub.REF drops at high temperature and rises at low temperature is cancelled or is made positive.

REFERENCES:
patent: 4525663 (1985-06-01), Henry
patent: 4961009 (1990-10-01), Baik
patent: 5146152 (1992-09-01), Jin et al.
patent: 5304918 (1994-04-01), Khieu
patent: 5339020 (1994-08-01), Siligoni et al.

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