Reference voltage generating circuit temperature-compensated wit

Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage

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327331, 327362, 327513, 323313, 323907, G05F 110, H03F 130

Patent

active

054345332

ABSTRACT:
In a reference voltage generating circuit having an improved temperature compensation function, a PMOS transistor forming a constant voltage circuit has the same characteristics as a PMOS transistor forming a negative feedback circuit. As an ambient temperature changes, gate-source voltage and drain current characteristics of each transistor are shifted, but temperature compensation is achieved by appropriately setting a drain current of each transistor. Transistors for the temperature compensation can be formed in the same manufacturing steps, so that temperature compensating effect can be obtained without an additional manufacturing step.

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"Temperature-Compensation Circuit Techniques for High-Density CMOS DRAMs", by D. S. Min et al., pp. 125-126.

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