Reference voltage generating circuit device

Details Reference voltage generating circuit device Reference voltage generating circuit device

1990-11-30

1992-09-22

Hille, Rolf

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 239, 3072968, H01L 2702

Patent

active

051501880

ABSTRACT:
A reference voltage generating circuit device, which is integrally formed on a semiconductor substrate and an external supply voltage is applied thereto, includes a resistor having a first terminal connected to a first supply terminal, which becomes high potential, at least one diode connected between a second terminal of the resistor and a second supply terminal, which becomes low potential, in a forward direction, and at least one second diode connected to the resistor in parallel and connected to the first diode in series and a forward direction, wherein a reference voltage is generated from a node between the first diode and the second diode.

REFERENCES:
patent: 4670706 (1987-06-01), Tobita
patent: 4716313 (1987-12-01), Hori et al.
patent: 4916389 (1990-04-01), Hori et al.
patent: 4972097 (1990-11-01), You
patent: 5008609 (1991-04-01), Fukiage
patent: 5041893 (1991-08-01), Nagai et al.
"Conference: Fifth European Solid State Circuits Conference, Esscirc 79 Southampton England" Sep. 18-21, 1979, MOS voltage reference based on polysilicon gate work function Difference by Oguey et al, pp. 28-30.
"An Experimental 1Mb DRAM with On-Chip Voltage Limiter", ISSCC 84, Feb. 24, 1984, Session XVIII: 256K/1Mb DRAMS-II 1984 IEEE Intern'l Solid-State Circuit Conference.

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