Reference voltage generating circuit, a semiconductor...

Electricity: power supply or regulation systems – Self-regulating – Using a three or more terminal semiconductive device as the...

Reexamination Certificate

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C323S314000

Reexamination Certificate

active

11515954

ABSTRACT:
The present invention provides a band gap type reference voltage generating circuit and a semiconductor integrated circuit having the same, capable of generating a reference voltage of about 1.2V or less whose temperature dependency is low, and realizing reduced offset voltage dependency of a differential amplifier. A band gap part has: a first resistor and a first bipolar transistor connected in series between power supply voltage terminals; a second resistor, a second bipolar transistor, and a third resistor connected in series between the power supply voltage terminals; and a differential amplifier that receives voltages generated by the first and second resistors, and an output of the differential amplifier is applied to the bases of the two transistors. The output part has a third bipolar transistor having a base to which the output of the differential amplifier is applied, a fourth resistor connected in series with the third bipolar transistor, a current mirror circuit for transferring current flowing in the third bipolar transistor, and a fifth resistor and a diode for converting the transferred current to voltage.

REFERENCES:
patent: 4633165 (1986-12-01), Pietkiewicz et al.
patent: 5581174 (1996-12-01), Fronen
patent: 6111396 (2000-08-01), Lin et al.
patent: 7019584 (2006-03-01), Bartel et al.
patent: 7088085 (2006-08-01), Marinca
patent: 2004-206633 (2004-07-01), None

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